Apparatus for electrostatic discharge protection

ABSTRACT

An apparatus includes an electrostatic discharge (ESD) protection device. In one embodiment, the protection device electrically coupled between a first node and a second node of an internal circuit to be protected from transient electrical events. The protection device includes a bipolar device or a silicon-controlled rectifier (SCR). The bipolar device or SCR can have a modified structure or additional circuitry to have a selected holding voltage and/or trigger voltage to provide protection over the internal circuit. The additional circuitry can include one or more resistors, one or more diodes, and/or a timer circuit to adjust the trigger and/or holding voltages of the bipolar device or SCR to a desired level. The protection device can provide protection over a transient voltage that ranges, for example, from about 100 V to 330V.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to copending application titled APPARATUSFOR ELECTROSTATIC DISCHARGE PROTECTION (Inventor: Edward Coyne; Atty.Docket No. ADIRE.035A, filed on the same date as the presentapplication), the disclosure of which is hereby incorporated byreference in its entirety.

BACKGROUND

1. Field

Embodiments of the invention relate to electronic devices, and moreparticularly, in one or more embodiments, to electrostatic dischargeprotection.

2. Description of the Related Technology

Electronic systems can be exposed to a transient electrical event, or anelectrical signal of a relatively short duration having rapidly changingvoltage and high power. Transient electrical events can include, forexample, electrostatic discharge (ESD) events arising from the abruptrelease of charge from an object or person to an electronic system.

Transient electrical events can destroy an integrated circuit (IC)inside an electronic system due to overvoltage conditions and highlevels of power dissipation over relatively small areas of the IC. Highpower dissipation can increase IC temperature, and can lead to numerousproblems, such as gate oxide punch-through, junction damage, metaldamage, and surface charge accumulation. Moreover, transient electricalevents can induce latch-up (inadvertent creation of a low-impedancepath), thereby disrupting the functioning of the IC and potentiallycausing permanent damage to the IC from self-heating in the latch-upcurrent path. Thus, there is a need to provide an IC with protectionfrom such transient electrical events.

SUMMARY

In one embodiment, an apparatus includes: an internal circuitelectrically coupled between a first node and a second node; and aprotection device electrically coupled between the first node and thesecond node. The protection device is configured to protect the internalcircuit from transient electrical events. The protection deviceincludes: a buried layer 510 having a doping of a first type; a firstplug 540 overlying the buried layer, and having a doping of the firsttype with a higher doping concentration than that of the buried layer,the first plug having an annular shape when viewed from above from theprotection device; a first well 520 overlying the buried layer, andlaterally surrounded by the first plug, the first well having a dopingof the first type with a lower doping concentration than that of thefirst plug; a second plug 530 laterally surrounding the first plug, thesecond plug having a doping of a second type different from the firsttype; a first region 550 disposed at least in an end portion of thefirst well 520 opposite the buried layer, and electrically coupled tothe first node, the first region having a doping of the second type witha higher doping concentration than that of the second plug 530; a secondregion 560 disposed in a top portion of the second plug 530, andelectrically coupled to the second node, the second region having adoping of the second type with a higher doping concentration than thatof the second plug; and a resistor electrically coupled between thefirst region 550 and the first plug 540, wherein the resistor isdisposed outside the first region and the first plug.

In another embodiment, an apparatus includes: an internal circuitelectrically coupled between a first node and a second node; and aprotection device electrically coupled between the first node and thesecond node, wherein the protection device is configured to protect theinternal circuit from transient electrical events. The protection deviceincludes: a buried layer having a doping of a first type; a first plugdisposed directly over the buried layer, and having a doping of thefirst type with a higher doping concentration than that of the buriedlayer, the first plug having an annular shape when viewed from above; afirst well disposed directly over the buried layer, and laterallysurrounded by the first plug, the first well having a doping of thefirst type with a lower doping concentration than that of the firstplug; a second plug laterally surrounding the first plug, the secondplug having a doping of a second type different from the first type; afirst region disposed at least in an end portion of the first well 520opposite the buried layer, and electrically coupled to the first node,the first region having a doping of the second type with a higher dopingconcentration than that of the second plug; and a second region disposedin a top portion of the second plug, and electrically coupled to thesecond node, the second region having a doping of the second type with ahigher doping concentration than that of the second plug.

In yet another embodiment, an apparatus includes: an internal circuitelectrically coupled between a first node and a second node; and aprotection device electrically coupled between the first node and thesecond node, wherein the protection device is configured to protect theinternal circuit from transient electrical events. The protection deviceincludes: a buried layer having a doping of a first type; a first plugoverlying the buried layer, and having a doping of the first type with ahigher doping concentration than that of the buried layer, the firstplug having an annular shape when viewed from above; a first welloverlying the buried layer, and laterally surrounded by the first plug,the first well having a doping of the first type with a lower dopingconcentration than that of the first plug; a second plug laterallysurrounding the first plug, the second plug having a doping of a secondtype different from the first type; a first region disposed in a topportion of the first well and electrically coupled to the first node,the first region having a doping of the second type with a higher dopingconcentration than that of the second plug; a second region disposed ina top portion of the second plug, and electrically coupled to the secondnode, the second region having a doping of the second type with a higherdoping concentration than that of the second plug; and a diode arraycomprising one or more diodes connected in series between the first plugand the second region.

In yet another embodiment, an apparatus includes: an internal circuitelectrically coupled between a first node and a second node; and aprotection device electrically coupled between the first node and thesecond node, wherein the protection device is configured to protect theinternal circuit from transient electrical events. The protection deviceincludes: a buried layer having a doping of a first type; a first plugoverlying the buried layer, and having a doping of the first type with ahigher doping concentration than that of the buried layer, the firstplug having an annular shape when viewed from above; a first welloverlying the buried layer, and laterally surrounded by the first plug,the first well having a doping of the first type with a lower dopingconcentration than that of the first plug; a second plug laterallysurrounding the first plug, the second plug having a doping of a secondtype different from the first type; a first region disposed in a topportion of the first well and electrically coupled to the first node,the first region having a doping of the second type with a higher dopingconcentration than that of the second plug, wherein the first regiondisposed in a top portion of the first well and at least in a portion ofa top portion of the first plug; and a second region disposed in a topportion of the second plug, and electrically coupled to the second node,the second region having a doping of the second type with a higherdoping concentration than that of the second plug.

In yet another embodiment, an apparatus includes: an internal circuitelectrically coupled between a first node and a second node; and aprotection device electrically coupled between the first node and thesecond node, wherein the protection device is configured to protect theinternal circuit from transient electrical events. The protection deviceincludes: a buried layer having a doping of a first type; a first plugoverlying the buried layer, and having a doping of the first type with ahigher doping concentration than that of the buried layer, the firstplug having an annular shape when viewed from above; a first welloverlying the buried layer, and laterally surrounded by the first plug,the first well having a doping of the first type with a lower dopingconcentration than that of the first plug; a second plug laterallysurrounding the first plug, the second plug having a doping of a secondtype different from the first type; a first region disposed in a topportion of the first well, the first region having a doping of thesecond type with a higher doping concentration than that of the secondplug; and a second region disposed in a top portion of the second plug,and electrically coupled to the second node, the second region having adoping of the second type with a higher doping concentration than thatof the second plug; a first resistor electrically coupled between thefirst region and the first node; and a second resistor electricallycoupled to the first plug.

In yet another embodiment, an apparatus includes: an internal circuit,electrically coupled between a first node and a second node; and aprotection device electrically coupled between the first node and thesecond node, wherein the protection device is configured to protect theinternal circuit from transient electrical events. The protection deviceincludes: a silicon-controlled rectifier (SCR) having an anode, a gate,and a cathode, wherein the anode is electrically coupled to the firstnode, and the cathode is electrically coupled to the second node; and adiode array comprising a plurality of diodes connected in series betweenthe gate and the anode of the silicon-controlled rectifier and arrangedsuch that the diodes conduct a current into the SCR to turn on the SCRwhen the diodes break down.

In yet another embodiment, an apparatus includes: an internal circuitelectrically coupled between a first node and a second node; and aprotection device electrically coupled between the first node and thesecond node, wherein the protection device is configured to protect theinternal circuit from transient electrical events. The protection deviceincludes: a silicon-controlled rectifier (SCR) having an anode, a gate,and a cathode, wherein the anode is electrically coupled to the firstnode, and the cathode is electrically coupled to the second node; and aresistor electrically coupled between the gate and the cathode of theSCR.

In yet another embodiment, an apparatus includes: an internal circuitelectrically coupled between a first node and a second node; and aprotection device electrically coupled between the first node and thesecond node, wherein the protection device is configured to protect theinternal circuit from transient electrical events. The protection deviceincludes a silicon-controlled rectifier (SCR) having an anode, a gate,and a cathode, wherein the anode is electrically coupled to the firstnode, and the cathode is electrically coupled to the second node. TheSCR includes: a substrate having a doping of a first type; a first welldisposed in a first upper portion of the substrate, and having a dopingof a second type different from the first type; a second well disposedin a second upper portion of the substrate, and spaced apart laterallyfrom the first well such that a third upper portion of the substrate islaterally interposed between the first and second wells, the second wellhaving a doping of the second type, the third upper portion having adoping of the first type; a first region disposed in a top portion ofthe first well, and having a doping of the second type with a higherdoping concentration than that of the first well, the first region beingelectrically coupled to the second node; a second region disposed in atop portion of the second well, and having a doping of the second typewith a higher doping concentration than that of the second well; a thirdregion disposed in the first well adjacent to the first region such thatthe third region is interposed laterally between the first region andthe third upper portion of the substrate, the third region having adoping of the first type with a higher doping concentration than that ofthe substrate; a fourth region disposed in the second well adjacent tothe second region such that the fourth region is interposed laterallybetween the second region and the third upper portion of the substrate,the fourth region having a doping of the first type with a higher dopingconcentration than that of the substrate, the fourth region beingelectrically coupled to the first node; and a gate contact disposed onthe third upper portion of the substrate. The third region has a lateraldimension extending in a direction from the first region toward thethird upper portion of the substrate, and the lateral dimension of thethird region is greater than the lateral dimension of the first regionin the direction.

In yet another embodiment, an apparatus includes: an internal circuitelectrically coupled between a first node and a second node; and aprotection device electrically coupled between the first node and thesecond node, wherein the protection device is configured to protect theinternal circuit from transient electrical events. The protection deviceincludes: a silicon-controlled rectifier (SCR) having an anode, a gate,and a cathode, wherein the anode is electrically coupled to the firstnode; a first resistor electrically coupled between the cathode of theSCR and the second node; and a second resistor electrically coupled tothe gate of the SCR.

In yet another embodiment, an apparatus includes: an internal circuitelectrically coupled between a first node and a second node; and aprotection device electrically coupled between the first node and thesecond node, wherein the protection device is configured to protect theinternal circuit from transient electrical events. The protection deviceincludes: a bipolar device having a first terminal, a second terminal,and a third terminal, wherein the first terminal is electrically coupledto the first node, and the third terminal is electrically coupled to thesecond node; an impedance block electrically coupled between the secondterminal of the bipolar device and a first voltage reference, whereinthe impedance block is configured to have a varying impedance; and animpedance control circuit configured to vary the impedance of theimpedance block.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram of an electronic system including aninternal circuit and ESD protection circuits according to oneembodiment.

FIG. 2 is a graph illustrating a relationship between output current andinput voltage of an example ESD protection device.

FIG. 3 is a block diagram of an ESD protection circuit according to oneembodiment.

FIG. 4A is a top plan view of a conventional bipolar ESD protectiondevice.

FIG. 4B is a cross-section of the conventional bipolar ESD protectiondevice of FIG. 4A, taken along the lines 4B-4B.

FIG. 5A is a top plan view of a bipolar ESD protection device accordingto one embodiment.

FIG. 5B is a cross-section of the bipolar ESD protection device of FIG.5A, taken along the lines 5B-5B.

FIG. 5C is a cross-section of a bipolar ESD protection device accordingto another embodiment.

FIG. 5D is a cross-section of a bipolar ESD protection device accordingto yet another embodiment.

FIG. 5E is a cross-section of a bipolar ESD protection device accordingto yet another embodiment.

FIG. 6A is a graph showing a relationship between transmission linepulse (TLP) voltage and TLP current of an ESD protection device having adiode TLP adjustable trigger mechanism.

FIG. 6B is a graph showing a relationship between collector-base spacingand trigger voltage of an ESD protection device having a bipolar TLPadjustable trigger mechanism.

FIG. 6C is a graph showing a relationship between transmission linepulse (TLP) voltage and TLP current of ESD protection devices accordingto embodiments with different holding voltages.

FIG. 6D is a graph showing a relationship between transmission linepulse (TLP) voltage and a lateral distance of an ESD protection deviceaccording to one embodiment.

FIG. 7A is a cross-section of a conventional silicon-controlledrectifier (SCR) ESD protection device.

FIG. 7B is a circuit diagram of the conventional SCR ESD protectiondevice of FIG. 6A.

FIG. 7C is a symbol of the conventional SCR ESD protection device ofFIG. 6A.

FIG. 8A is a top plan view of an SCR ESD protection device according toanother embodiment.

FIG. 8B is a cross-section of the device 800, taken along the lines8B-8B.

FIG. 8C is a circuit diagram of the SCR ESD protection device of FIG.8A.

FIG. 8D is a graph showing a relationship between transmission linepulse (TLP) voltage and TLP current of the protection device of FIGS.8A-8C.

FIG. 9A is a cross-section of an SCR ESD protection device according toyet another embodiment.

FIG. 9B is a cross-section of an SCR ESD protection device according toyet another embodiment.

FIG. 10A is a cross-section of an SCR ESD protection device according toyet another embodiment.

FIG. 10B is a circuit diagram of the SCR ESD protection device of FIG.10A.

FIG. 10C is a schematic exploded perspective view of a resistor for usein the SCR ESD protection device of FIG. 10A according to oneembodiment.

FIG. 11A is a circuit diagram of an SCR ESD protection device accordingto yet another embodiment.

FIG. 11B is a graph illustrating a relationship between output currentand input voltage of the ESD protection device of FIG. 11A.

FIG. 12 is a circuit diagram of a bipolar ESD protection deviceaccording to yet another embodiment.

DETAILED DESCRIPTION OF EMBODIMENTS

The following detailed description of certain embodiments presentsvarious descriptions of specific embodiments of the invention. However,the invention can be embodied in a multitude of different ways asdefined and covered by the claims. In this description, reference ismade to the drawings where like reference numerals indicate identical orfunctionally similar elements.

Terms such as above, below, over and so on as used herein refer to adevice orientated as shown in the figures and should be construedaccordingly. It should also be appreciated that because regions within asemiconductor device (such as a transistor) are defined by dopingdifferent parts of a semiconductor material with differing impurities ordiffering concentrations of impurities, discrete physical boundariesbetween different regions may not actually exist in the completed devicebut instead regions may gradually transition from one to another. Someboundaries as shown in the accompanying figures are of this type and areillustrated as abrupt structures merely for the assistance of thereader. In the embodiments described below, p-type regions can include ap-type semiconductor material, such as boron, as a dopant. Further,n-type regions can include an n-type semiconductor material, such asphosphorous, as a dopant. A skilled artisan will appreciate variousconcentrations of dopants in regions described below.

In all the embodiments described in this document, a region, a layer, ora well denoted with “N” or “n” can contain n-type dopants, and a region,a layer, or a well denoted with “P” or “p” can contain p-type dopantsunless otherwise indicated. Further, “N+,” “n+,” “P+,” and “p+” indicatea higher doping concentration than “N,” “n,” “P,” and “p,” respectively.Also, “n,” “N,” “p,” and “P” indicate a higher doping concentration than“n−,” “N−,” “p−,” and “P−,” respectively.

In the embodiments described in this document, the term “overlying” issimilar in meaning to “being disposed over.” When a first layer overliesa second layer, the first layer is positioned above the second layer,and can contact directly or indirectly the second layer unless otherwisespecified. When a first layer is directly over a second layer, the lowersurface of the first layer contacts to the top surface of the secondlayer.

Overview of Electrostatic Discharge Protection

Referring to FIG. 1, an electronic device including an internal circuitand protection circuits according to one embodiment will be describedbelow. The illustrated electronic device 100 includes a first powersupply rail 101, a second power supply rail 102, an internal circuit103, first to fifth protection circuits 110-150, and first to fourthnodes 161-164. The third node 163 can also be referred to as an “inputnode.” The fourth node 164 can also be referred to as an “output node.”

In one embodiment, the protection circuits 110-150 are integrated withthe internal circuit 103 in a common semiconductor substrate forsystem-on-a-chip applications. In other embodiments, one or more of theprotection circuits 110-150 can be placed in a stand-alone IC, in acommon package for system-on-a-package applications, and electricallycoupled to the internal circuit 103.

The first power supply rail 101 is electrically coupled to a firstvoltage source Vcc, and the second power supply rail 102 is electricallycoupled to a second voltage source Vee. In one embodiment, the firstvoltage source Vcc can provide a voltage between about 0 V and about 300V, for example, about 250 V. The second voltage source Vee can provide avoltage between about −300 V and about 0 V, for example, 0 V.

The internal circuit 103 is electrically coupled to the first and secondpower supply rails 101, 102 at the first and second nodes 161, 162,respectively, to receive power. The internal circuit 103 can include oneor more integrated circuits (ICs) of any configuration and function,which use electrostatic discharge protection. The internal circuit 103can include an input 103 a electrically coupled to the third node 163,and an output 103 b electrically coupled to the fourth node 164. In someembodiments, the electronic device can also include a resistor betweenthe third node 163 and the input 103 a, and/or between the fourth node164 and the output 103 b to reduce a current flow to the internalcircuit 103 during an ESD event. The internal circuit 103 can receive aninput voltage signal V_(IN) at the input 103 a, and output an outputvoltage signal V_(OUT) at the output 103 b.

In the illustrated embodiment, the first protection circuit 110 has afirst terminal electrically coupled to the third node 163, and a secondterminal electrically coupled to the second node 162. The firstprotection circuit 110 can serve to protect the third node 163 coupledto the input 103 a of the internal circuit 103 from an ESD eventoccurring between the third node 163 and the second power supply rail102 (or some other node or pad coupled to the internal circuit 103),which has a voltage exceeding that of the first power supply rail 101.

The second protection circuit 120 has a first terminal electricallycoupled to the first node 161, and a second terminal electricallycoupled to the second node 162. The second protection circuit 120 canserve to protect the internal circuit 103 from an ESD event occurringbetween the first and second power supply rail 101, 102.

The third protection circuit 130 has a first terminal electricallycoupled to the fourth node 164, and a second terminal electricallycoupled to the second node 162. The third protection circuit 130 canserve to protect the fourth node 164 coupled to the output 103 b of theinternal circuit 103 from an ESD event occurring between the fourth node164 and the second power supply rail 102 (or some other node or padcoupled to the internal circuit 103), which has a voltage exceeding thatof the first power supply rail 101.

The fourth protection circuit 140 has a first terminal electricallycoupled to the first node 161, and a second terminal electricallycoupled to the third node 163. The fourth protection circuit 140 canserve to protect the third node 163 from an ESD event occurring betweenthe third node 163 and the first power supply rail 101 (or some othernode or pad coupled to the internal circuit 103), which has a voltageexceeding that of the first power supply rail 101.

The fifth protection circuit 150 has a first terminal electricallycoupled to the first node 161, and a second terminal electricallycoupled to the fourth node 164. The fifth protection circuit 150 canserve to protect the fourth node 164 from an ESD event occurring betweenthe fourth node 164 and the first power supply rail 101 (or some othernode or pad coupled to the internal circuit 103), which has a voltageexceeding that of the first power supply rail 101.

In some embodiments, a protection circuit can have current-voltagecharacteristics as shown in FIG. 2. Ideally, the protection circuit doesnot pass any current until a trigger voltage V_(T) is reached. Thetrigger voltage V_(T) should be less than a breakdown voltage V_(B) foran internal circuit being protected. Once the trigger voltage V_(T) isreached, the protection circuit starts conducting a current, and thevoltage across the protection circuit falls back to a holding voltageV_(H) that is lower in magnitude than the trigger voltage V_(T). Fromthe holding voltage V_(H), ideally an increase in current flow wouldoccur without an increase in the voltage across the protection circuit.Practically, however, due to resistance within the protection circuit,the voltage across the protection circuit can increase slightly as thecurrent flow increases in the region 30.

The holding voltage V_(H) should be above (in magnitude) the powersupply rail voltage (for example, Vcc in FIG. 1) by, for example, atleast about 4 or 5 V, (alternatively, about 10% higher than the powersupply rail voltage) in order to accommodate temperature and processvariations. Otherwise, once the protection circuit is triggered, itmight not reset to a non-conducting state. After the voltage across theprotection circuit decreases below the holding voltage V_(H), theprotection circuit can reset by itself, thereby returning to a highimpedance state. A skilled artisan will appreciate that thecharacteristic of a protection circuit can vary widely, depending on theconfiguration of the internal circuit 103.

ESD Protection Device with Multi-Range ESD Protection

Referring to FIG. 3, one embodiment of an electrostatic discharge (ESD)protection device will be described below. The illustrated protectiondevice 300 can include a first ESD protection circuit 310, a second ESDprotection circuit 320, and a third ESD protection circuit 330. Theprotection circuits 310-330 are electrically coupled in parallel betweena first terminal T1 and a second terminal T2.

The illustrated protection device 300 can form, for example, any of theprotection circuits 110-150 of FIG. 1. The first and second terminalsT1, T2 can be two of the nodes 161, 162, 163, 164 of FIG. 1 to which theprotection device is coupled to provide ESD protection over the internalcircuit 103 of FIG. 1.

In one embodiment, the first ESD protection circuit 310 can provide ESDprotection over a low voltage range, for example, a range from about 10V to 100 V, and the second ESD protection circuit 320 can provide ESDprotection over an intermediate voltage range, for example, a range fromabout 100 V to 200 V. The third ESD protection circuit 330 can provideESD protection over a high voltage range, for example, a range fromabout 200 V to 330 V. In other embodiments, the ranges of voltage of theprotection circuits 310-330 can vary widely, depending on the circuits310-330. In some embodiments, one or two of the circuits 310-330 areincluded in the protection device 300. Other numbers of circuits will bereadily determined by one of ordinary skill in the art.

In one embodiment, an ESD protection device can have a bipolar deviceconfiguration, as will be described in connection with FIG. 4-6D or 12.In other embodiments, an ESD protection device can have asilicon-controlled rectifier configuration, as will be described inconnection with FIGS. 7A-11B.

ESD Protection Device with Bipolar Device Configuration

Referring to FIGS. 4A and 4B, a conventional ESD protection devicehaving a bipolar transistor configuration will be described below. Theillustrated ESD protection device 400 can be a silicon-on-insulator(SOI) isolated well device. As such, the protection device 400 sits inits own “island” of semiconductor material, which is formed in a well ofinsulation and is insulated from the devices outside the well on thesame monolithic integrated circuit. In this example, a handle wafer actsas a carrier substrate 401 and has a buried oxide layer 402 formed ofsilicon dioxide on the wafer.

Trench side walls 403 a-403 d are also formed (typically of silicondioxide) so as to isolate the island of silicon forming the protectiondevice 400 in a well formed by the layer 402 and the side walls 403a-403 d. The process for forming the layer 402 and the side walls 403a-403 d can be a conventional fabrication process. In otherarrangements, the well of semiconductor material can be junctionisolated. Such a well can be referred to as a well of isolation orinsulation. The protection device 400 can include a P buried layer 410,a P well 420, an N plug 430, a P plug 440, an N+ emitter region 450, andan N+ collector region 460. The components of the protection device 400can be formed by a bipolar process or a BiCMOS process.

The P buried layer 410 is formed on the buried oxide layer 402, andcontains p-type dopants. The P well 420 is formed on the P buried layer410. The N plug 430 is formed on the buried oxide layer 402, and isadjacent to the P well 420 such that the N plug 430 is surrounded andcontacted by the side walls 403 a-403 d while surrounding and contactingthe P well 420 and the P plug 440. The N plug 430 includes the N+collector region 460 at the top portion thereof. The N plug 430 can forma collector ring.

The P plug 440 has an annular shape such that it surrounds a centralportion 420 a of the P well 420 while overlying other portions of the Pwell 420. In addition, the P plug 440 laterally surrounds the N+ emitterregion 450. The P plug 440 can have a depth Dp (from the top surface ofthe substrate 401) that is shallower than the P well 420 and deeper thanthe N+ emitter region 450. The N+ emitter region 450 overlies thecentral portion 420 a of the P well 420, and is laterally surrounded bythe P plug 440.

In the protection device 400, a lateral bipolar transistor 480 is formedto have an emitter at the N+ emitter region 450, a base at the P plug440, and a collector at the N plug 430 and the N+ collector region 460.The emitter and collector of the transistor 480 can be electricallycoupled to first and second nodes, respectively, of an internal circuitto be protected. For example, the first and second nodes can be any twoof the nodes 161, 162, 163, 164 of FIG. 1.

A lateral distance DL between the N+ emitter region 450 (or the emitter)and the N plug 430 (or the collector) determines the trigger voltageV_(T) of the protection device 400. Thus, the trigger voltage V_(T) ofthe protection device 400 can be adjusted by selecting the lateraldistance DL. In some examples, the lateral distance DL can be betweenabout 1 μm and about 12 μm, or alternatively between about 5 μm andabout 15 μm.

A current flowing through a bipolar transistor in an ESD protectiondevice can be expressed in Equation (1) below. Such a current can bereferred to as a “snapback current” (Is) in the context of thisdocument.

Is≈β·kV _(H)  Equation (1)

In Equation (1), β is the gain of the bipolar transistor, k is aconstant of proportionality, and V_(H) is the holding voltage of thetransistor. Thus, V_(H) is inversely proportional to the gain. Theholding voltage V_(H) can be adjusted by changing the gain of thetransistor.

The protection device 400 can effectively operate to provide ESDprotection when an overvoltage condition (or transmission line pulse(TLP)) has a maximum voltage of lower than 100 V, or preferably about 70V. In such an instance, the trigger voltage of the protection device 400can be below 100 V.

However, if the protection device 400 is to operate at an overvoltagecondition in a voltage range between about 100 V and 200 V, theprotection device 400 should also have a trigger voltage in that voltagerange. This can be accomplished by increasing the lateral distance DL ofthe device 400 over that used for a trigger voltage of less than 100 V.However, when the lateral distance DL is increased, a current flowingfrom the collector (the N+ collector region 460 of FIG. 4B) to theemitter (N+ emitter region 450 of FIG. 4B) of the lateral bipolartransistor 480 becomes concentrated in a small region between them. Thiscan result in an increase in the temperature of the protection device400, which can significantly damage the device. Thus, there is a needfor an ESD protection device that can operate with overvoltageconditions in a voltage range between about 100 V and about 200 V.

Referring to FIGS. 5A and 5B, an ESD protection device according to oneembodiment will be described below. The illustrated ESD protectiondevice 500A can be a silicon-on-insulator (SOI) isolated well device. Assuch, the protection device 500A sits in its own “island” ofsemiconductor material, which is formed in a well of insulation and isinsulated from the devices outside the well on the same monolithicintegrated circuit. In this example, a handle wafer 501 acts as acarrier substrate and has a buried oxide layer 502 formed of silicondioxide on the wafer 501.

Trench side walls 503 a-503 d are also formed (typically of silicondioxide) so as to isolate the island of silicon forming the protectiondevice 500A in a well formed by the layer 502 and the side walls 503a-503 d. The process for forming the layer 502 and the side walls 503a-503 d can be a conventional fabrication process. In otherarrangements, the well of semiconductor material can be junctionisolated. Such a well can be referred to as a well of isolation orinsulation.

The protection device 500A can include a P buried layer 510, a P well520, an N plug 530, a P+ plug 540, an N+ emitter region 550, and an N+collector region 560. The components of the protection device 500A canbe formed by, for example, a bipolar process or a BiCMOS process. Theconfigurations of the P buried layer 510, the P well 520, the N plug530, the N+ emitter region 550, and the N+ collector region 560 can beas described above in connection with the P buried layer 410, the P well420, the N plug 430, the N+ emitter region 450, and the N+ collectorregion 460 of FIGS. 4A and 4B.

In the device 500A, a lateral bipolar transistor 580 is configured tohave an emitter at the N+ emitter region 550, a base at the P+ plug 540,and a collector at the N plug 530 and the N+ collector region 560. Theemitter and collector of the transistor 580 can be coupled to first andsecond nodes, respectively, of an internal circuit to be protected. Forexample, the first and second nodes can be any two of the nodes 161,162, 163, 164 of FIG. 1.

In the illustrated embodiment, the N+ emitter region 550 and the P+ plug540 are electrically coupled to an emitter-base resistor 590 such that afirst end of the resistor 590 is coupled to the N+ emitter region 550and a second end of the resistor 590 is coupled to the P+ plug 540. Theemitter-base resistor 590 can have a resistance Rbe of about 80Ω toabout 5 kΩ. The emitter-base resistor 590 facilitates uniformdistribution of a current substantially across a region between the N+emitter region 550 and the N plug 530, thereby reducing temperatureincrease.

As a result, a lateral distance D1 between the n+ emitter region 550 (orthe emitter) and the N plug 530 (or the collector) can be increased tohave a trigger voltage V_(T) between about 100 V and about 200 V withoutdamaging the protection device 500A. FIG. 6A shows a relationshipbetween a transmission line pulse (TLP) voltage and a TLP current of anESD protection device having a diode TLP adjustable trigger mechanism.In the diode TLP adjustable trigger mechanism, a diode trigger voltagecorresponds to the voltage when a reverse-biased PN junction reachesimpact ionization to generate a current. With an ESD protection devicehaving a diode TLP adjustable trigger mechanism, the diode triggervoltage can be adjusted by changing the layout spacing (for example, thelateral distance DL of FIG. 4B) between n-type and p-type regions thatdefine the diode junction.

FIG. 6B shows a relationship between the lateral distance D1 and thetrigger voltage of the protection device 500A of FIGS. 5A and 5B, whichhas a bipolar TLP adjustable trigger mechanism. In the protection device500, the collector-base junction is substantially the same as the pnjunction of a pn junction diode. However, the pn junction is built intoa bipolar device that gains an impact ionization current generated by adiode breakdown, and, as a result, the breakdown voltage of the bipolardevice is related to the diode breakdown and the gain of the bipolardevice. Thus, in the bipolar TLP adjustable trigger mechanism, a bipolartrigger voltage is substantially the same as the diode trigger voltageexcept that the reverse-biased diode is part of a bipolar device thatamplifies the impact ionization current. As a result, the bipolartrigger voltage is at a lower value than the diode trigger voltage,depending on the gain of the bipolar device.

In addition, the P+ plug 540 of the protection device 500A is differentfrom the P plug 440 of FIGS. 4A and 4B in that it extends down tocontact a top surface of the P buried layer 510. By having the deeper P+plug 540 than the P plug 440 of FIG. 4B, the gain β2 of the transistor580 of FIG. 5B is smaller that the gain β1 of the transistor 480 of FIG.4B. As such, the holding voltage V_(H2) of the transistor 580 can begreater than the holding voltage V_(H1) of the transistor 480, asindicated by Equation (2) below.

$\begin{matrix}{V_{H\; 2} = {V_{H\; 1}\frac{\beta \; 1}{\beta \; 2}}} & {{Equation}\mspace{14mu} (2)}\end{matrix}$

In another embodiment, the gain β2 of the transistor 580 can bedecreased by increasing the doping concentration of the P+ plug 540. Forexample, the doping concentration of the P+ plug 540 can be betweenabout 1×10¹⁵/cm³ and about 5×10¹⁸/cm³. In yet another embodiment, thegain β2 of the transistor 580 can be decreased by increasing the depthand the doping concentration of the P+ plug 540. In an alternativeembodiment, the holding voltage of the transistor 580 can be adjusted bychanging the gain of the transistor 580. The gain can be adjusted, usingthe lateral distance D1 or the doping concentration of the P+ plug 540.

FIG. 6C shows an example of a relationship between the TLP voltage andTLP current of a protection device. FIG. 6C also shows a trigger voltageand the holding voltages V_(H1) and V_(H2) of the devices 400 and 500Ahaving different P plug configurations.

In yet another embodiment, the holding voltage of the protection device500A can be adjusted by having a selected lateral distance D1 betweenthe n+ emitter 550 (or the emitter) and the N plug 530 (or thecollector). FIG. 6D shows a relationship between the lateral distance D1and the TLP holding voltage of the protection device 500.

Referring back to FIG. 3, in one embodiment, the first ESD protectioncircuit 310 can have the structure described above in connection withFIGS. 4A and 4B, while the second ESD protection circuit 320 can havethe structure described above in connection with FIGS. 5A and 5B. Insuch an embodiment, the first and second ESD protection circuits 310,320 can be implemented in the same or similar structure with differentdimensions or spacing, depending on the desired ESD voltage ranges.Further, by adding a passive element, such as the base-emitter resistor590 of FIG. 5B, the second ESD protection circuit 320 can providedesired ESD protection at a higher voltage without damages.

Referring to FIG. 5C, an ESD protection bipolar device according toanother embodiment will be described below. The illustrated ESDprotection bipolar device 500C can be a silicon-on-insulator (SOI)isolated well device. In the illustrated embodiment, a handle wafer 501acts as a carrier substrate and has a buried oxide layer 502 formed ofsilicon dioxide on the wafer 501.

The ESD protection bipolar device 500C can include trench side walls 503c, 503 d, a P buried layer 510, a P well 520, an N plug 530, a P+ plug540, an N+ emitter region 550, and an N+ collector region 560. Theconfigurations of the handle wafer 501, the buried oxide layer 502, thetrench side walls 503 c, 503 d, the P buried layer 510, the P well 520,the N plug 530, the P+ plug 540, the N+ emitter region 550, and the N+collector region 560 can be as described above in connection with FIGS.5A and 5B. In another embodiment, the configuration of the P+ plug 540can be as described above in connection with the P plug 440 of FIG. 4B.The emitter E and collector C of the device 500C can be coupled to firstand second nodes, respectively, of an internal circuit to be protected.For example, the first and second nodes can be any two of the nodes 161,162, 163, 164 of FIG. 1.

The ESD protection bipolar device 500C can also include an array 591 ofp-n junction diodes coupled in series between the P+ plug 540 and the N+collector region 560. The array 591 of diodes can include first to n-thdiodes 591 a-591 n, wherein n can be an integer equal to or greaterthan 1. The first diode 591 a can include an anode coupled to the P+plug 540, and a cathode coupled to the anode of a second diode in thearray 591. The n-th diode 591 n can include an anode coupled to thecathode of an (n−1)-th diode in the array 591, and a cathode coupled tothe N+ collector region 560.

By selecting the number of diodes in the array 591, the trigger voltageof the bipolar device 500C can be adjusted to a desired level. Forexample, by adding one or more diodes to the array 591, the triggervoltage of the bipolar device 500C can be increased.

Referring to FIG. 5D, an ESD protection bipolar device according to yetanother embodiment will be described below. The illustrated ESDprotection bipolar device 500D can be a silicon-on-insulator (SOI)isolated well device. In the illustrated embodiment, a handle wafer 501can act as a carrier substrate and has a buried oxide layer 502 formedof silicon dioxide on the wafer 501.

The ESD protection bipolar device 500D can include trench side walls 503c, 503 d, a P buried layer 510, a P well 520, an N plug 530, a P+ plug540, an extended N+ emitter region 550′, and an N+ collector region 560.The configurations of the handle wafer 501, the buried oxide layer 502,the trench side walls 503 c, 503 d, the P buried layer 510, the P well520, the N plug 530, the P+ plug 540, and the N+ collector region 560can be as described above in connection with FIGS. 5A and 5B. In anotherembodiment, the configuration of the P+ plug 540 can be as describedabove in connection with the P plug 440 of FIG. 4B. The emitter E andcollector C of the device 500C can be coupled to first and second nodes,respectively, of an internal circuit to be protected. For example, thefirst and second nodes can be any two of the nodes 161, 162, 163, 164 ofFIG. 1.

In the illustrated ESD protection bipolar device 500D, the extended N+emitter region 550′ extends through a top portion of the P+ plug 540,and can contact the N plug 530. In another embodiment, the extended N+emitter region 550′ extends through only part of the top portion of theP+ plug 540, and does not contact the N plug 530.

By having the extended N+ emitter region 550′, the trigger voltage ofthe device 500D can be adjusted. Rather than having a violent impactionization trigger mechanism, the device 500D can have a more resistivepunch-through mechanism to turn on the device 500D, which can increasethe trigger voltage.

Referring to FIG. 5E, an ESD protection bipolar device according to yetanother embodiment will be described below. The illustrated ESDprotection bipolar device 500E can be a silicon-on-insulator (SOI)isolated well device. In the illustrated embodiment, a handle wafer 501acts as a carrier substrate and has a buried oxide layer 502 formed ofsilicon dioxide on the wafer 501.

The ESD protection bipolar device 500E can include trench side walls 503c, 503 d, a P buried layer 510, a P well 520, an N plug 530, a P+ plug540, an N+ emitter region 550, and an N+ collector region 560. Theconfigurations of the handle wafer 501, the buried oxide layer 502, thetrench side walls 503 c, 503 d, the P buried layer 510, the P well 520,the N plug 530, the P+ plug 540, the N+ emitter region 550, and the N+collector region 560 can be as described above in connection with FIGS.5A and 5B. In another embodiment, the configuration of the P+ plug 540can be as described above in connection with the P plug 440 of FIG. 4B.

The ESD protection bipolar device 500E can also include a base resistor595 a electrically coupled to the P+ plug 540, and an emitter resistor595 b electrically coupled to the N+ emitter region 550. The baseresistor 595 a can have a resistance Zb of about 0Ω to about 200Ω. Theemitter resistor 595 b can have a resistance Ze of about 0Ω to about200Ω. In one embodiment, the emitter resistor 595 b can have a structurewhich will be described in connection with FIG. 10C.

The emitter resistor 595 b can have a first end and a second end. Thefirst end of the emitter resistor 595 b can be coupled to the N+ emitterregion 550. The second end of the emitter resistor 595 b and thecollector C of the device 500E can be coupled to first and second nodes,respectively, of an internal circuit to be protected. For example, thefirst and second nodes can be any two of the nodes 161, 162, 163, 164 ofFIG. 1.

If Zb approaches 0, the device 500E can have a relatively high holdingvoltage. In contrast, if Ze approaches 0, the device 500E can have arelatively low holding voltage. In configurations between the above twoextreme configurations, as Ze is increased to be greater than Zb, theholding voltage of the device 500E can be increased.

ESD Protection Device With a Silicon-Controlled Rectifier Configuration

Referring to FIGS. 7A to 7C, a conventional ESD protection device havinga silicon-controlled rectifier (SCR) configuration will be describedbelow. The illustrated protection device 700 includes a p-type substrate701, a first n well 710, a second n well 720, a first n+ region 721, asecond n+ region 722, a first p+ region 731, and a second p+ region 732.

The first n well 710 and the second n well 720 are formed in the p-typesubstrate 701, and are spaced apart from each other with a centralportion 701 a of the substrate 701 interposed therebetween. The firstand second n wells 710, 720 have a first depth D1 from a top surface ofthe substrate 701. The first n+ region 721 is formed in the first n well710, and has a second depth D2 from the top surface of the substrate701.

The first p+ region 731 is formed in the first n well 710 and has thesecond depth D2 from the top surface of the substrate 701. The first p+region 731 is formed adjacent to the first n+ region 721 such that thefirst p+ region 731 is laterally interposed between the first n+ region721 and a top portion of the first n well 710.

The second p+ region 732 is formed in the in the second n well 720 andhas the second depth D2 from the top surface of the substrate 701. Thesecond p+ region 732 is formed adjacent to the second n+ region 722 suchthat the second p+ region 732 is laterally interposed between the secondn+ region 722 and a top portion of the second n well 720.

In the illustrated embodiment, a silicon-controlled rectifier is formedto have a first bipolar transistor 751, and a second bipolar transistor752. The first bipolar transistor 751 can be an NPN bipolar transistorhaving an emitter at the first n+ region 721, a base at the p-typesubstrate 701, and a collector at the second n well 720. The secondbipolar transistor 752 can be a PNP bipolar transistor having an emitterat the second p+ region 732, a base at the second n well 720, and acollector at the p-type substrate 701.

FIG. 7B shows a circuit diagram of the first and second transistors 751,752. The circuit shown in FIG. 7B forms a silicon-controlled rectifier(SCR) 750. In the silicon-controlled rectified 750, the emitter of thesecond transistor 752 can also be referred to as the anode of the SCR750. The emitter of the first transistor 751 can also be referred to asthe cathode of the SCR 750. In addition, the base of the firsttransistor 751 and the collector of the second transistor 752 areelectrically coupled to each other, and can be referred to as the gateof the SCR 750. A symbol representing an SCR having an anode, a cathode,and a gate is shown in FIG. 7C. The anode and cathode of the SCR 750 areelectrically coupled to two nodes for ESD protection of an internalcircuit, for example, as shown in FIG. 1.

The protection device 700 of FIG. 7A can be used to provide a triggervoltage between about 200 V and about 300 V. However, the protectiondevice 700 can have thermal runaway for a trigger mechanism for such arelatively high voltage, and can be subjected to destructive powersurges for such high trigger voltages due to violent impact ionization.In addition, the protection device 700 can have relatively high powersnapback currents that inject more free carriers than the dopingconcentration, and as a result it can be difficult to turn off thedevice 700 by controlling the holding voltage. Further, there is a needfor externally controlling the gain of the NPN and PNP transistors 751,752 of the protection device 700. In addition, there is a need forproviding a relatively high power ESD rating by conducting largecurrents at high voltages while reducing or maintaining the layout areaof the device.

Referring to FIGS. 8A-8C, an ESD protection device having asilicon-controlled rectifier (SCR) configuration according to oneembodiment will be described below. The illustrated protection device800 includes an SCR device 801 and a diode array 802. FIG. 8A is a topplan view of the device 800, and FIG. 8B is a cross-section of thedevice 800, taken along the lines 8B-8B. FIG. 8C is a schematic circuitdiagram of the device 800. In some embodiments, the SCR device 801 canbe a silicon-on-insulator (SOI) isolated well device. As such, the SCRdevice 801 sits in its own “island” of semiconductor material, which isformed in a well of insulation and is insulated from the devices outsidethe well on the same monolithic integrated circuit.

The SCR device 801 can include a p-type region 810, a first n well 820,and a second n well 830. The first n well 820 is laterally surrounded bythe p-type region 810. The p-type region 810 is laterally surrounded bythe second n well 830. The p-type region 810 and the second n well 830have an annular shape when viewed from above.

The SCR device 801 can also include a first n+ region 821, a second n+region 822, a first p+ region 831, a second p+ region 832, and a gatecontact 811. The first n+ region 821 is formed in the first n well 820,and extends in the y-direction in FIG. 8A, having an elongated shapewhen viewed from above. The first p+ region 831 is also formed in thefirst n well 820, and laterally surrounds the first n+ region 821,forming an annular shape when viewed from above. The second n+ region822 is formed in the second n well 830, and extends along the second nwell 830, forming an annular shape when viewed from above. The second p+region 832 is also formed in the second n well 830, and extends alongthe second n well 830, and adjacent to the second n+ region 822. Thesecond p+ region 832 also has an annular shape when viewed from above,and laterally surrounded and contacted by the second n+ region 822. Thegate contact 811 is formed on the p-type region 810, and extends to forman annular shape when viewed from above.

The first n+ region 821 can serve as the cathode of the SCR device 801,and the second p+ region 832 can serve as the anode of the SCR device801. The cathode and anode of the SCR device 801 can be electricallycoupled to first and second nodes, respectively, of an internal circuitto be protected. For example, the first and second nodes can be any twoof the nodes 161, 162, 163, 164 of FIG. 1.

The diode array 802 can include one or more p-n junction diodesconnected in series, as shown in FIG. 8C. The diode array 802 caninclude one or more diodes, for example, first to n-th diodes 851-859,in which n is an integer equal to or greater than 1. The first diode 851can have an anode electrically coupled to the gate contact 811 of theSCR device 801, and a cathode electrically coupled to the anode of thesecond diode 852. The second diode 852 has an anode electrically coupledto the cathode of the first diode 851, and a cathode electricallycoupled to the anode of the third diode 853. In this manner, an i-thdiode has an anode electrically coupled to the cathode of the (i−1)-thdiode, and a cathode electrically coupled to the anode of the (i+1)-thdiode, in which i is an integer from 2 to n−1. The n-th diode 859 has ananode electrically coupled to the cathode of the (n−1)-th diode 858, anda cathode electrically coupled to the second p+ region 832 (the anode)of the SCR device 801.

In FIG. 8A, the diodes 851-859 are illustrated in a matrix form. Askilled artisan will, however, appreciate that the diodes 851-859 can bearranged in any suitable layout.

By selecting the number of diodes in the array 802, the trigger voltageof the SCR device 801 can be adjusted to a desired level. For example,the addition of the one or more diodes of the array 802 increases thetrigger voltage of the SCR device 801 by about 7 V to about 267 V. Whenthe diodes are reverse-biased, they have a low breakdown voltage, forexample, 7 V. However, when an array of diodes are used; the totalbreakdown voltage is the sum of all the diodes. When these diodes breakdown, they conduct a current into the SCR and turn it on. Once the SCRis on, it absorbs the full ESD event. Therefore, the diodes only act asa trigger for the SCR, which can be adjusted by changing the number ofdiodes.

FIG. 8D shows a relationship between transmission line pulse (TLP)voltage and TLP current of the SCR device 801, depending on the numberof diodes in the diode array 802. FIG. 8D shows that the trigger voltageof the SCR device 801 can be increased by increasing the number ofdiodes. In FIG. 8D, a slope having a higher trigger voltage is producedby a device having a greater number of diodes in the diode array 802.

Referring to FIG. 9A, an ESD protection device having asilicon-controlled rectifier (SCR) configuration according to anotherembodiment will be described below. The illustrated SCR device 900Aincludes a p-type substrate 701, a first n well 710, a second n well720, a first n+ region 721, a second n+ region 722, a first p+ region731, and a second p+ region 732. Details of the substrate 701 and theregions or wells 710, 720, 721, 722, 731, 732 can be as described abovein connection with the substrate 701 and the regions or wells 710, 720,721, 722, 731, 732 of FIG. 7A.

The first n+ region 721 can serve as the cathode of the SCR device 900A,and the second p+ region 732 can serve as the anode of the SCR device900A. The cathode and anode of the SCR device 900A can be electricallycoupled to first and second nodes, respectively, of an internal circuitto be protected. For example, the first and second nodes can be any twoof the nodes 161, 162, 163, 164 of FIG. 1.

The SCR device 900A, however, has an emitter-base resistor 950 coupledbetween the first n+ region 721 and the central portion 701 a of thep-type substrate 701 via a gate contact (not shown). The emitter-baseresistor 950 can have a resistance R_(BE) of about 80Ω to about 15 kΩ.The resistance R_(BE) of the emitter-base resistor 950 can be adjustedto change the holding voltage of the device 900A. In the illustratedprotection device, the trigger voltage can be determined by impactionization, which can be adjusted by changing a spacing between then-well (the collector) 710 and the central portion (the base) 701 a. Theemitter-base resistor 950 can also serve to reduce thermal runaway atthe trigger voltage.

Referring to FIG. 9B, an ESD protection device having asilicon-controlled rectifier (SCR) configuration according to yetanother embodiment will be described below. The illustrated SCR device900B includes a p-type substrate 701, a first n well 710, a second nwell 720, a first n+ region 721, a second n+ region 722, a first p+region 931, and a second p+ region 932.

The first n+ region 721 can serve as the cathode of the SCR device 900B,and the second p+ region 932 can serve as the anode of the SCR device900B. The cathode and anode of the SCR device 900B can be electricallycoupled to first and second nodes, respectively, of an internal circuitto be protected. For example, the first and second nodes can be any twoof the nodes 161, 162, 163, 164 of FIG. 1. Other details of thesubstrate 701 and the regions/wells 710, 720, 721, 722, 931, 932 can beas described above in connection with the substrate 701 and theregions/wells 710, 720, 721, 722, 731, 732 of FIG. 7A except that thefirst p+ region 931 and the second p+ region 932 are longer in lateraldimension than the first p+ region 731, and the second p+ region 732 ofFIG. 7A.

Each of the first p+ region 931 and the second p+ region 932 can have alength L1 between about 2 μm and about 20 μm whereas the first p+ region731, and the second p+ region 732 of FIG. 7A can have a length betweenabout 2 μm and about 20 μm. Each of the first p+ region 931 and thesecond p+ region 932 has a spacing S1 from the central portion 701 a ofthe p-type substrate. The spacing S1 can be from about 5 μm to about 30μm.

By having the above configuration, the trigger voltage of the device900B can be adjusted. Rather than having a violent impact ionizationtrigger mechanism, the device 900B can have a more resistivepunch-through, which can increase the trigger voltage as the length ofthe p+ regions 931, 932 is increased.

Referring to FIGS. 10A and 10B, an ESD protection device having asilicon-controlled rectifier (SCR) configuration according to yetanother embodiment will be described below. The illustrated protectiondevice can include an SCR device 1000 that has a p-type substrate 701, afirst n well 710, a second n well 720, a first n+ region 721, a secondn+ region 722, a first p+ region 731, and a second p+ region 732.

The second n+ region 722 can serve as the cathode of the SCR device1000, and the first p+ region 731 can serve as the anode of the SCRdevice 1000. The cathode and anode of the SCR device 1000 can beelectrically coupled to first and second nodes, respectively, of aninternal circuit to be protected. For example, the first and secondnodes can be any two of the nodes 161, 162, 163, 164 of FIG. 1. Otherdetails of the substrate 701 and the region/wells 710, 720, 721, 722,731, 732 can be as described above in connection with the substrate 701and the region/wells 710, 720, 721, 722, 731, 732 of FIG. 7A.

The protection device also includes a base resistor 1060 electricallycoupled to the gate of the SCR device 1001, and an emitter resistor 1070electrically coupled to the anode (or emitter) of the SCR device 1001.The base resistor 1060 can have a resistance Zb of about 0Ω to about200Ω. The emitter resistor 1070 can have a resistance Ze of about 0Ω toabout 200Ω. A circuit equivalent to that of the protection device isshown in FIG. 10B.

During operation, a base current Ib is divided into a first base currentI_(b1) flowing to the base resistor 1060, and a second base currentI_(b2) flowing to the emitter resistor 1070. Further, the device 1000can have an emitter current Ie. The SCR device 1000 can have a gain βn′that can be expressed as in Equations (3-1) to (3-3) below.

$\begin{matrix}{\beta_{n}^{\prime} = {\frac{I_{e}}{I_{b}} = {\beta_{n}\; \frac{I_{b\; 2}}{I_{b}}}}} & {{Equation}\mspace{14mu} \left( {3\text{-}1} \right)} \\{\beta_{n}^{\prime} = {\beta_{n}\left( {1 - \frac{I_{b\; 1}}{I_{b}}} \right)}} & {{Equation}\mspace{14mu} \left( {3\text{-}2} \right)} \\{\beta_{n}^{\prime} \approx {\beta_{n}\left( {1 - \left( \frac{Z_{e}}{{Z_{b} + Z_{e}}\;} \right)} \right)}} & {{Equation}\mspace{14mu} \left( {3\text{-}3} \right)}\end{matrix}$

In Equations (3-1) to (3-3), βn is the gain of the NPN transistor 751(FIG. 10B). If Zb is 0, βn′ also approaches 0, and thus βn′×βp issmaller than 1. βp is the gain of the PNP transistor 752. In such aconfiguration, the SCR device 1000 can have a relatively high holdingvoltage. In contrast, if Ze is 0, βn′ also approaches the value of βn,and thus βn′×βp is greater than 1. In such a configuration, the SCRdevice 1000 can have a relatively low holding voltage.

In configurations between the above two extreme configurations, the gainβn′ varies, depending on a ratio of Zb to Ze. As Ze is increased to begreater than Zb, the holding voltage of the device 1000 can beincreased. Table 1 below shows example resistance values of the emitterand base resistors 1070, 1060 and holding voltages V_(H) at therespective values.

TABLE 1 Ze (ohms) Zb (ohms) V_(H) (volts) 3.2 37 90 20.8 37 125 89 37145 125 37 240

Referring to FIG. 10C, one embodiment of an impedance structure for usein providing the emitter resistance Ze of FIGS. 10A and 10B will bedescribed below. In the illustrated embodiment, the impedance structure1080 includes a first metallization coil 1081 and a second metallizationcoil 1082 overlying the first metallization coil 1081. The metallizationcoils 1081, 1082 are electrically coupled at the center although FIG.10C, which is an exploded perspective view, shows them separated fromeach other.

The impedance structure 1080 is coupled to the device 1000 such that afirst end is coupled to the second n+ region 722 to receive an emittercurrent Ie, and a second end serves to output the emitter current Ie.The first metallization coil 1081 spirals towards the center such thatthe emitter current Ie flows in the clockwise direction, and the secondmetallization coil 1082 spirals towards the center such that the emittercurrent Ie flows out in the anti-clockwise direction. This configurationcancels out inductances from the first and second metallization coils1081, 1082 while providing a desired resistance value for the emitterresistor 1070. In one embodiment, the impedance structure 1080 can beformed of aluminum. The impedance structure 1080 is relativelyinsusceptible to ESD events. The impedance structure 1080 can bereferred to as a counter current metal bifilar coil in the context ofthis document.

Referring to FIG. 11A, an ESD protection device having asilicon-controlled rectifier (SCR) configuration according to yetanother embodiment will be described below. The illustrated protectiondevice 1100 includes a silicon-controlled rectifier (SCR) 1110, a gateresistor 1112, a timer 1120, a first voltage source 1130, a secondvoltage source 1140, a base impedance block 1160, an emitter impedanceblock 1170, and first to fifth nodes N1-N5.

The SCR 1110 can have an anode electrically coupled to the first voltagesource 1130 via the second node N2, a cathode electrically coupled tothe emitter impedance block 1170 via the first node N1, and a gateelectrically coupled to the gate resistor 1112 via the third node N3.The cathode and anode of the SCR 1110 can be electrically coupled tofirst and second nodes, respectively, of an internal circuit to beprotected. For example, the first and second nodes can be any two of thenodes 161, 162, 163, 164 of FIG. 1. For a symmetric SCR device, theanode and cathode are the same, and therefore the polarities ofconnections to the SCR device do not matter. However, for anon-symmetric SCR device, the SCR device should be correctly connectedto voltages references, such as Vcc and Vee. Other details of the SCR1110 can be as described above in connection with any one or more ofFIG. 7A, 7B, 8A-8C, 9A, or 9B.

The gate resistor 1112 can have a first end coupled to the third nodeN3, and a second end coupled to a voltage reference, for example,ground. The gate resistor 1112 can have a resistance R3 of about 1 kΩ toabout 30 kΩ for example, 15 kΩ.

The timer 1120 serves to delay the switching on of the base impedanceblock 1160. The timer 1120 can be an RC timer, and can include a timercapacitor 1131, and a timer resistor 1132 coupled in series between thefirst node N1 and a voltage reference, for example ground. The timercapacitor 1131 and the timer resistor 1132 are coupled to each other atthe fifth node N5. The timer capacitor 1131 can have a capacitance C1 ofabout 0 pF to about 100 pF, for example, 2 pF. The timer resistor 1132can have a resistance R2 of about 0 MΩ to about 10 MΩ, for example, 2MΩ.

The first voltage source 1130 includes a positive terminal coupled tothe second node N2 and a negative terminal coupled to the second voltagesource 1140. The second voltage source 1140 can have a positive terminalcoupled to the negative terminal of the first voltage source 1130, and anegative terminal coupled to a voltage reference, such as ground.

The base impedance block 1160 serves to provide the base impedance,similar to the base resistor 1060 of FIGS. 10A and 10B. The baseimpedance block 1160, however, is turned on at a delayed time to provideimpedance in response to the operation of the timer 1120. The baseimpedance block 1160 can include one or more transistors 1161-1167 and abase resistor 1169.

The transistors 1161-1167 are coupled in parallel to one another betweenthe third node N3 and the fourth node N4. In the illustrated embodiment,seven transistors are included in the base impedance block 1160, but thenumber of transistors can vary widely, depending on the impedance to beprovided by the base impedance block 1160. Each of the transistors1161-1167 can be an NMOS transistor having a source coupled to thefourth node N4, a drain coupled to the third node N3, and a gate coupledto the fifth node N5. In other embodiments, the base impedance block1160 can be modified to include one or more PMOS transistors or NPN orPNP bipolar transistors in place of the NMOS transistors 1161-1167. Thebase resistor 1169 has a first end coupled to the fourth node N4 and asecond end coupled to a voltage reference, for example, ground.

The emitter impedance block 1170 can include an emitter resistor. Theemitter resistor can provide a resistance similar to that of the emitterresistor 1070 of FIGS. 10A and 10B. The emitter resistor 1170 can have aresistance R1 of about 0Ω to about 200Ω, for example, 9Ω. In oneembodiment, the emitter resistor can have the structure shown in FIG.10C.

During operation, when an ESD event occurs, the timer 1120 delaysturning on the transistors 1161-1167 during a period of timesubstantially equal to the time constant τ of the timer 1120. The timeconstant τ can be equal to R2×C1. During the period of timesubstantially equal to the time constant, the base impedance Zb issubstantially greater than the emitter impedance Ze. Thus, the gain βn′of the device 1100 approaches the gain βn of the NPN transistor of theSCR 1110.

After the period, the transistors 1161-1167 are turned on, therebysubstantially reducing the base impedance Zb. Thus, the base impedanceZb is substantially smaller than the emitter impedance Ze. Thus, thegain βn′ of the device 1100 approaches 0. Thus, the holding voltage ofthe device 1100 can be lowered by the operation of the timer 1120.

FIG. 11B shows a relationship between the TLP voltage and TLP current ofthe device 1100. In FIG. 11B, the trigger voltage is about 250 V, butthe holding voltage is relatively lower, and is about 40 V.

Referring to FIG. 12, an ESD protection device having a bipolar deviceconfiguration according to yet another embodiment will be describedbelow. The illustrated protection device 1200 includes a bipolartransistor 1210, a base resistor 1212, a timer 1120, a first voltagesource 1130, a second voltage source 1140, a base impedance block 1160,an emitter impedance block 1170, and first to fifth nodes N1-N5.

The bipolar transistor 1210 can have a collector electrically coupled tothe first voltage source 1130 via the second node N2, an emitterelectrically coupled to the emitter impedance block 1170 via the firstnode N1, and a base electrically coupled to the base resistor 1212 viathe third node N3. The collector and emitter of the bipolar transistor1210 can be electrically coupled to first and second nodes,respectively, of an internal circuit to be protected. For example, thefirst and second nodes can be any two of the nodes 161, 162, 163, 164 ofFIG. 1. The illustrated bipolar transistor 1210 is a non-symmetricdevice, and therefore its collector should be connected to the secondnode N2, and its emitter should be connected to the first node N1. Otherdetails of the bipolar transistor 1210 can be as described above inconnection with any one or more of FIGS. 4A and 4B, 5A and 5B, 5C, 5D,or 5E.

The base resistor 1212 can have a first end coupled to the third nodeN3, and a second end coupled to a voltage reference, for example,ground. The base resistor 1212 can have a resistance R3 of about 1 kΩ toabout 30 kΩ, for example, 15 kΩ. The configurations of the timer 1120,the first voltage source 1130, the second voltage source 1140, the baseimpedance block 1160, the emitter impedance block 1170 can be asdescribed above in connection with those shown in FIG. 11A.

During operation, when an ESD event occurs, the timer 1120 delaysturning on the transistors 1161-1167 in the base impedance block 1160during a period of time substantially equal to the time constant τ ofthe timer 1120. The time constant t can be equal to R2×C1. During theperiod of time substantially equal to the time constant, the transistors1161-1167 are turned on, thereby substantially reducing the baseimpedance Zb. Thus, the base impedance Zb is substantially smaller thanthe emitter impedance Ze. Thus, the gain of the device 1200 approaches,and thus, the holding voltage of the device 1200 can be lowered by theoperation of the timer 1120.

In some embodiments, two or more of the embodiments described above inconnection with FIGS. 4A and 4B, 5A and 5B, 5C, 5D, 5E, 7A-7C, 8A-8C,9A, 9B, 10A-10C, 11A, and 12 can be combined to form one or more ESDdevices to cover a wide range of voltage, as shown in FIG. 3.

In all the embodiments described above, the protection devices caninclude layers, regions, and wells having either n-type or p-typedopants. In other embodiments, the doping types of all the layers,regions, and wells of the protection devices can be opposite to thosedescribed and shown in the above embodiments, and the same principlesand advantages can still apply to the other embodiments. In addition,swapping p and n for diodes reverses the anode and cathode of a diode,such as those of the diode array 802 (FIG. 8C).

Applications

Thus, a skilled artisan will appreciate that the configurations andprinciples of the embodiments can be adapted for any devices that can beprotected from over- or under-voltage conditions by the ESD protectiondevices described above. The ESD protection devices employing the abovedescribed configurations can be implemented into various electronicdevices or integrated circuits. Examples of the electronic devices caninclude, but are not limited to, consumer electronic products, parts ofthe consumer electronic products, electronic test equipments, etc.Examples of the electronic devices can also include circuits of opticalnetworks or other communication networks, and disk driver circuits. Theconsumer electronic products can include, but are not limited to, amobile phone, cellular base stations, a telephone, a television, acomputer monitor, a computer, a hand-held computer, a netbook, a tabletcomputer, a digital book, a personal digital assistant (PDA), a stereosystem, a cassette recorder or player, a DVD player, a CD player, a VCR,a DVR, an MP3 player, a radio, a camcorder, a camera, a digital camera,a portable memory chip, a copier, a facsimile machine, a scanner, amulti functional peripheral device, a wrist watch, a clock, etc.Further, the electronic device can include unfinished products.

The foregoing description and claims may refer to elements or featuresas being “connected” or “coupled” together. As used herein, unlessexpressly stated otherwise, “connected” means that one element/featureis directly or indirectly connected to another element/feature, and notnecessarily mechanically. Likewise, unless expressly stated otherwise,“coupled” means that one element/feature is directly or indirectlycoupled to another element/feature, and not necessarily mechanically.Thus, although the various schematics shown in the figures depictexample arrangements of elements and components, additional interveningelements, devices, features, or components may be present in an actualembodiment (assuming that the functionality of the depicted circuits isnot adversely affected).

Although this invention has been described in terms of certainembodiments, other embodiments that are apparent to those of ordinaryskill in the art, including embodiments that do not provide all of thefeatures and advantages set forth herein, are also within the scope ofthis invention. Moreover, the various embodiments described above can becombined to provide further embodiments. In addition, certain featuresshown in the context of one embodiment can be incorporated into otherembodiments as well. Accordingly, the scope of the present invention isdefined only by reference to the appended claims.

1. An apparatus comprising: an internal circuit electrically coupledbetween a first node and a second node; and a protection deviceelectrically coupled between the first node and the second node, whereinthe protection device is configured to protect the internal circuit fromtransient electrical events, the protection device comprising: a buriedlayer having a doping of a first type; a first plug overlying the buriedlayer, and having a doping of the first type with a higher dopingconcentration than that of the buried layer, the first plug having anannular shape when viewed from above from the protection device; a firstwell overlying the buried layer, and laterally surrounded by the firstplug, the first well having a doping of the first type with a lowerdoping concentration than that of the first plug; a second pluglaterally surrounding the first plug, the second plug having a doping ofa second type different from the first type; a first region disposed atleast in an end portion of the first well opposite the buried layer, andelectrically coupled to the first node, the first region having a dopingof the second type with a higher doping concentration than that of thesecond plug; a second region disposed in a top portion of the secondplug, and electrically coupled to the second node, the second regionhaving a doping of the second type with a higher doping concentrationthan that of the second plug; and a resistor electrically coupledbetween the first region and the first plug, wherein the resistor isdisposed outside the first region and the first plug.
 2. The apparatusof claim 1, wherein the resistor has a resistance in a range of about 80ohms (Ω) to about 5 kiloohms (kΩ).
 3. The apparatus of claim 1, whereinthe first region, the second region, the first well, the first plug, andthe second plug are configured to operate as a bipolar transistor whenthere is an overvoltage condition between the first node and the secondnode.
 4. The apparatus of claim 3, wherein the bipolar transistor isconfigured to have an emitter at the first region, a base at the firstplug, and a collector at the second plug and the second region.
 5. Theapparatus of claim 1, wherein the first plug is disposed on the buriedlayer such that a bottom portion of the first plug contacts a topsurface of the buried layer.
 6. The apparatus of claim 1, wherein alateral distance separating the first well and the second plug isgreater than 12 micrometers (μm).
 7. The apparatus of claim 6, wherein alateral distance separating the first well and the second plug isgreater than 15 μm.
 8. The apparatus of claim 1, wherein the first plughas a doping concentration in a range between about 1×10¹⁵ per cubiccentimeters (1×10¹⁵/cm³) and about 5×10¹⁸ per cubic centimeters(5×10¹⁸/cm³).
 9. The apparatus of claim 1, wherein the protection devicehas a trigger voltage greater than about 100 V.
 10. The apparatus ofclaim 9, wherein the protection device has a trigger voltage betweenabout 100 V and about 200 V.
 11. The apparatus of claim 1, wherein theprotection device is disposed in a well defined by insulating side wallsand an insulating layer, wherein the insulating side walls laterallysurround the second plug, wherein the insulating layer is disposedunderneath the buried layer and the second plug.
 12. An apparatuscomprising: an internal circuit electrically coupled between a firstnode and a second node; and a protection device electrically coupledbetween the first node and the second node, wherein the protectiondevice is configured to protect the internal circuit from transientelectrical events, the protection device comprising: a buried layerhaving a doping of a first type; a first plug disposed directly over theburied layer, and having a doping of the first type with a higher dopingconcentration than that of the buried layer, the first plug having anannular shape when viewed from above; a first well disposed directlyover the buried layer, and laterally surrounded by the first plug, thefirst well having a doping of the first type with a lower dopingconcentration than that of the first plug; a second plug laterallysurrounding the first plug, the second plug having a doping of a secondtype different from the first type; a first region disposed at least inan end portion of the first well 520 opposite the buried layer, andelectrically coupled to the first node, the first region having a dopingof the second type with a higher doping concentration than that of thesecond plug; and a second region disposed in a top portion of the secondplug, and electrically coupled to the second node, the second regionhaving a doping of the second type with a higher doping concentrationthan that of the second plug.
 13. The apparatus of claim 12, wherein thefirst region, the second region, the first well, the first plug, and thesecond plug are configured to operate as a bipolar transistor when thereis an overvoltage condition, and wherein the bipolar transistor isconfigured to have an emitter at the first region, a base at the firstplug, and a collector at the second plug and the second region.
 14. Anapparatus comprising: an internal circuit electrically coupled between afirst node and a second node; and a protection device electricallycoupled between the first node and the second node, wherein theprotection device is configured to protect the internal circuit fromtransient electrical events, the protection device comprising: a buriedlayer having a doping of a first type; a first plug overlying the buriedlayer, and having a doping of the first type with a higher dopingconcentration than that of the buried layer, the first plug having anannular shape when viewed from above; a first well overlying the buriedlayer, and laterally surrounded by the first plug, the first well havinga doping of the first type with a lower doping concentration than thatof the first plug; a second plug laterally surrounding the first plug,the second plug having a doping of a second type different from thefirst type; a first region disposed in a top portion of the first welland electrically coupled to the first node, the first region having adoping of the second type with a higher doping concentration than thatof the second plug; a second region disposed in a top portion of thesecond plug, and electrically coupled to the second node, the secondregion having a doping of the second type with a higher dopingconcentration than that of the second plug; and a diode array comprisingone or more diodes connected in series between the first plug and thesecond region.
 15. The apparatus of claim 14, wherein the diode arraycomprises first to n-th diodes, each of the diodes having an anode and acathode, n being an integer equal to or greater than 1, wherein theanode of the first diode is electrically coupled to the first plug, andwherein the cathode of the n-th diode is electrically coupled to thesecond region.
 16. The apparatus of claim 14, wherein the first region,the second region, the first well, the first plug, and the second plugare configured to operate as a bipolar transistor when there is anovervoltage condition, and wherein the bipolar transistor is configuredto have an emitter at the first region, a base at the first plug, and acollector at the second plug and the second region.
 17. An apparatuscomprising: an internal circuit electrically coupled between a firstnode and a second node; and a protection device electrically coupledbetween the first node and the second node, wherein the protectiondevice is configured to protect the internal circuit from transientelectrical events, the protection device comprising: a buried layerhaving a doping of a first type; a first plug overlying the buriedlayer, and having a doping of the first type with a higher dopingconcentration than that of the buried layer, the first plug having anannular shape when viewed from above; a first well overlying the buriedlayer, and laterally surrounded by the first plug, the first well havinga doping of the first type with a lower doping concentration than thatof the first plug; a second plug laterally surrounding the first plug,the second plug having a doping of a second type different from thefirst type; a first region disposed in a top portion of the first welland electrically coupled to the first node, the first region having adoping of the second type with a higher doping concentration than thatof the second plug, wherein the first region disposed in a top portionof the first well and at least in a portion of a top portion of thefirst plug; and a second region disposed in a top portion of the secondplug, and electrically coupled to the second node, the second regionhaving a doping of the second type with a higher doping concentrationthan that of the second plug.
 18. The apparatus of claim 17, wherein thefirst region extends to contact at least a portion of the second plug.19. An apparatus comprising: an internal circuit electrically coupledbetween a first node and a second node; and a protection deviceelectrically coupled between the first node and the second node, whereinthe protection device is configured to protect the internal circuit fromtransient electrical events, the protection device comprising: a buriedlayer having a doping of a first type; a first plug overlying the buriedlayer, and having a doping of the first type with a higher dopingconcentration than that of the buried layer, the first plug having anannular shape when viewed from above; a first well overlying the buriedlayer, and laterally surrounded by the first plug, the first well havinga doping of the first type with a lower doping concentration than thatof the first plug; a second plug laterally surrounding the first plug,the second plug having a doping of a second type different from thefirst type; a first region disposed in a top portion of the first well,the first region having a doping of the second type with a higher dopingconcentration than that of the second plug; and a second region disposedin a top portion of the second plug, and electrically coupled to thesecond node, the second region having a doping of the second type with ahigher doping concentration than that of the second plug; a firstresistor electrically coupled between the first region and the firstnode; and a second resistor electrically coupled to the first plug. 20.The apparatus of claim 19, wherein the first resistor comprises: a firstcoil having a first end electrically coupled to the first region,wherein the first coil spirals towards the center of the first coil inone of clockwise or anti-clockwise direction; and a second coilunderlying the first coil and having a second end electrically coupledto the first node, wherein the second coil spirals towards the center ofthe second coil in the other of clockwise or anti-clockwise direction,wherein the centers of the first and second coils are electricallycoupled to each other.